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2N4401TAR

Manufacturer:

On Semiconductor

Mfr.Part #:

2N4401TAR

Datasheet:
Description:

BJTs TO-92-3 Through Hole NPN 625 mW Collector Base Voltage (VCBO):60 V Collector Emitter Voltage (VCEO):40 V Emitter Base Voltage (VEBO):6 V

ParameterValue
Voltage Rating (DC)40 V
Length5.2 mm
Width4.19 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height5.33 mm
PackagingReel
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
PolarityNPN
Weight0.24 g
Frequency250 MHz
Number of Elements1
Current Rating600 mA
Lifecycle StatusProduction (Last Updated: 5 months ago)
Max Power Dissipation625 mW
Power Dissipation625 mW
Max Collector Current600 mA
Collector Emitter Breakdown Voltage40 V
Transition Frequency250 MHz
Element ConfigurationSingle
Max Frequency250 MHz
Collector Emitter Voltage (VCEO)40 V
Max Breakdown Voltage40 V
Gain Bandwidth Product250 MHz
Collector Base Voltage (VCBO)60 V
Collector Emitter Saturation Voltage750 mV
Emitter Base Voltage (VEBO)6 V
hFE Min100
Schedule B8541210080
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 months ago)
Transistor TypeNPN

Stock: 3872

Distributors
pcbx
Unit Price$0.11883
Ext.Price$0.11883
QtyUnit PriceExt.Price
1$0.11883$0.11883
10$0.08139$0.81390
50$0.07349$3.67450
100$0.06635$6.63500
500$0.04942$24.71000
1000$0.04318$43.18000
3000$0.03538$106.14000
5000$0.02899$144.95000
10000$0.02376$237.60000